Deposition
Materials
Tantalum PVD, an ideal solution for
barrier layered sputtering
Global Advanced Metals (GAM) is a fully integrated producer of tantalum materials ideal for physical vapor deposition (PVD) applications. Tantalum PVD is primarily used for barrier layer sputtering in semiconductor chip manufacturing and GAM has been the premier supplier of high-purity tantalum for more than 70 years.
Fully integrated from the hard rock mine to finished product ensures that GAM can manage the quality, traceability, cost and conflict-free sourcing of tantalum materials.
GAM is an industry leader in conflict-free initiatives and maintains a diverse, reliable and economical supply of tantalum ore through Ta rights at the largest Western Australian mines. Additionally, GAM has industry expertise in recycling tantalum revert from all streams.
GAM maintains a patented process and ISO certification for quality control for advanced and varied geometries and forms in tantalum and for PVD applications.
High Purity Powder
GAM is a leading supplier of high-purity tantalum powders used as feedstock for sputtering targets. GAM offers 5N’s pure (99.999%) powder and the lowest levels of niobium (Nb) available in the industry.
High Purity Ingot
GAM has multiple electron beam (EB) furnaces for melting tantalum into ingots ideal for PVD targets. Ingot diameters of 8, 10, and 12 inches are available and ultra-high purity of 6N’s (99.9999%) can be achieved. GAM’s EB melted tantalum ingots can be melted to customized weights and further processed into common shapes including billet, rod, plate, or discs.
GAM has extensive experience in a broad variety of analytical techniques commonly used in PVD applications.
Plate & Targets
GAM has the capability to convert its ultra-high purity tantalum ingots into desired forms for a PVD application. GAM’s greater than 70 years of industry experience ensures that any and all downstream mill working of the ultra-high purity tantalum materials maintain the high quality demanded by the PVD applications.